概要
給与
8,000 MYR ~ 16,000 MYR
業界
Software/Information Processing, IT/Telecommunications, Manufacturing(Computer/Telecommunication), Manufacturing(Electronics/Semiconductors)
仕事内容
We are seeking a Memory Layout Designer to independently execute physical layout design and completion of SRAM and/or Register File (RF) memory macros. You will own full-custom layout from floorplanning through DRC/LVS sign-off, working closely with circuit designers to deliver pitchmatched, tape-out-ready memory blocks. Seniority level to be determined by experience.
Key Responsibilities
• Execute full-custom physical layout of SRAM and/or multi-port Register File (RF) macros, including bit cell arrays, periphery circuits (decoders, wordline drivers, sense amplifiers, write drivers), and I/O rings, to tape-out quality with limited guidance.
• Interpret circuit schematics and layout specifications to implement pitch-matched arrays and hierarchical peripheral blocks, ensuring correct device sizing, poly/diffusion pitches, and metal routing within process constraints.
• Drive DRC, LVS, and ERC verification to closure independently; track and resolve violations systematically and maintain sign-off records for assigned memory blocks.
• Perform parasitic extraction (PEX) and work directly with circuit designers on post-layout simulation correlation; flag and resolve layout-induced timing or performance degradations.
• Implement design-for-manufacturability (DFM) best practices: critical layer fill, dummy device insertion, metal density compliance, and multi-patterning coloring at advanced nodes.
• Produce accurate layout deliverables including GDS stream-out, LEF abstracts, and associated documentation; maintain revision history and design review records.
• Interface with circuit designers and physical verification engineers to resolve layout-toschematic mismatches and drive end-to-end closure on all assigned memory macros.
求めている人材
応募条件
• BS/MS in Electrical/Electronic Engineering (or equivalent experience).
• 3-5 years of hands-on full-custom physical layout experience in memory design (SRAM and/or RF).
• Proficient with any layout entry EDA tool such as Cadence Virtuoso Layout Suite (or equivalent) and physical verification tools (Calibre DRC/LVS or equivalent); able to resolve violations independently to tape-out quality.
• Solid working knowledge of CMOS process design rules at advanced nodes (28nm and below); ability to interpret and apply complex DRM constraints in day-to-day layout execution.
• Ability to read and understand transistor-level schematics; clear grasp of the layout-tocircuit relationship covering parasitics, device matching, IR drop, and latch-up.
• Hands-on experience with parasitic extraction flows (Calibre PEX, Quantus, or StarRC) and back-annotation of extracted netlists to circuit simulation.
• Demonstrated ability to take a memory macro from initial floorplan through full DRC/LVS sign-off with minimal supervision.
Preferred / Nice-to-Have Experience
• Experience as part of a Memory Compiler team; familiarity with modular layout design requirements to feed automated compiler generation flows (e.g., parameterized cell banks, snap-to-grid floorplans, compiler-consumable GDS/LEF hierarchies).
• Awareness of Memory Compiler output views and their layout constraints: LEF pin/obstruction abstraction, GDS layer mapping, and stream-out requirements.
• Exposure to EM/IR analysis and memory macro power integrity sign-off methodology.
• Experience with FinFET-node layout constraints: fin quantization, local interconnect rules, self-aligned multi-patterning (SAMP/SADP), and via-pillar requirements.
• Layout automation scripting (Cadence SKILL, TCL, Python, or equivalent) for repetitive tasks such as array generation, via-bar insertion, or DRC waiver management. Scripting proficiency is a bonus, not a requirement.英語
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その他言語
English
その他
福利厚生
- Annual Leave 14 days
- Medical Leave 14 days
- Medical Insurance
- Dental/Optical RM500/year
- Outpatient RM1000/year
- Performance Bonus
- Yearly Increment就業時間
8am ~ 5pm
休日
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職種
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